Latchup characterization of high energy ion implanted new CMOS twin wells that comprised the BILLI (buried implanted layer for lateral isolation) and BL/CL (buried layer/connecting layer) structures

Author

Kim, Jong-Kwan ; Park, Seong-Hyung ; Lee, Young-Jong ; Sung, Yung-Kwon

Author_Institution

Adv. Tech. Lab., LG Semicon. Ltd., Cheong-Joo, South Korea

fYear

1997

fDate

8-10 Apr 1997

Firstpage

346

Lastpage

352

Abstract

We have investigated the latchup characteristics of various CMOS well structures possible with high energy ion implantation processes, including conventional retrograde well, BILLI well and BL/CL structure. We also compare those characteristics with conventional diffused wells in bulk and retrograde wells with STI isolation technology. We show DC latchup characterization results that allow us to evaluate each technology and suggest guidelines for the optimization of latchup hardness

Keywords

CMOS integrated circuits; characteristics measurement; circuit optimisation; integrated circuit measurement; integrated circuit reliability; ion implantation; isolation technology; BILLI well; CMOS twin wells; DC latchup characterization; STI isolation technology; buried implanted layer for lateral isolation; buried layer/connecting layer structures; diffused wells; high energy ion implantation processes; latchup characteristics; latchup hardness optimization; retrograde well; Boron; CMOS technology; Doping profiles; Implants; Isolation technology; Resists; Robustness; Silicon; Space technology; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1997. 35th Annual Proceedings., IEEE International

Conference_Location

Denver, CO

Print_ISBN

0-7803-3575-9

Type

conf

DOI

10.1109/RELPHY.1997.584285

Filename

584285