III–V nitride microcantilever as a displacement sensor

Author

Talukdar, Abdul ; Koley, Goutam

Author_Institution

Univ. of South Carolina, Columbia, SC, USA

fYear

2015

fDate

21-25 June 2015

Firstpage

180

Lastpage

183

Abstract

The application of gated piezoresitor (or `piezotransistor´) embedded GaN microcantilever utilizing unique properties of AlGaN/GaN Heterojunction Field Effect Transistor (HFET) to very significantly enhance the device performance in order to transduce femtoscale displacement have been demonstrated. This novel technology offers several orders higher sensitivity than state-of-the-art and enabled detection of minute explosive in open ambient by photoacoustic spectroscopy.

Keywords

III-V semiconductors; aluminium compounds; cantilevers; displacement measurement; explosive detection; field effect transistors; gallium compounds; intelligent sensors; microsensors; photoacoustic spectroscopy; transducers; wide band gap semiconductors; AlGaN-GaN; GaN; HFET; III-V nitride embedded microcantilever; displacement sensor; explosive detection; femtoscale displacement transducer; gated piezoresitor; heterojunction field effect transistor; photoacoustic spectroscopy; piezotransistor; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Oscillators; Silicon; Wide band gap semiconductors; HFET; III–V nitride; MEMS; Piezoresistor; microcantilever;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2015 Transducers - 2015 18th International Conference on

Conference_Location

Anchorage, AK

Type

conf

DOI

10.1109/TRANSDUCERS.2015.7180891

Filename

7180891