Title :
Comparison of mask writing tools and mask simulations for 0.16 μm devices
Author :
Balasinski, A. ; Coburn, D.
Author_Institution :
Cypress Semicond., San Jose, CA, USA
Abstract :
The impact of mask corner rounding on the quality of pattern reproduction for deep submicron devices is investigated. Of particular interest is the resolution of very small OPC (optical proximity correction) features (serifs) used to reduce line end shortening of the photoresist. Mask rounding was simulated and compared to SEM images of the chrome written with different tools. The effect was investigated for two types of SRAM cells, based on design features such as line ends, inside and outside corners, staircases, and contact holes
Keywords :
SRAM chips; masks; photoresists; proximity effect (lithography); scanning electron microscopy; semiconductor process modelling; 0.16 micron; IC manufacture; SEM imaging; SRAM; chrome mask; contact hole; corner rounding; deep submicron device; line end shortening; mask simulation; mask writing tool; optical proximity correction; pattern reproduction; photoresist; serif; staircase; Design automation; Joining processes; Lighting; MOSFET circuits; Proximity effect; Resists; Semiconductor device manufacture; Silicon; Virtual manufacturing; Writing;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 1999 IEEE/SEMI
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-5217-3
DOI :
10.1109/ASMC.1999.798268
