Comparison of mask writing tools and mask simulations for 0.16 μm devices

Author

Balasinski, A. ; Coburn, D.

Author_Institution

Cypress Semicond., San Jose, CA, USA

fYear

1999

fDate

1999

Firstpage

372

Lastpage

377

Abstract

The impact of mask corner rounding on the quality of pattern reproduction for deep submicron devices is investigated. Of particular interest is the resolution of very small OPC (optical proximity correction) features (serifs) used to reduce line end shortening of the photoresist. Mask rounding was simulated and compared to SEM images of the chrome written with different tools. The effect was investigated for two types of SRAM cells, based on design features such as line ends, inside and outside corners, staircases, and contact holes

Keywords

SRAM chips; masks; photoresists; proximity effect (lithography); scanning electron microscopy; semiconductor process modelling; 0.16 micron; IC manufacture; SEM imaging; SRAM; chrome mask; contact hole; corner rounding; deep submicron device; line end shortening; mask simulation; mask writing tool; optical proximity correction; pattern reproduction; photoresist; serif; staircase; Design automation; Joining processes; Lighting; MOSFET circuits; Proximity effect; Resists; Semiconductor device manufacture; Silicon; Virtual manufacturing; Writing;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference and Workshop, 1999 IEEE/SEMI

Conference_Location

Boston, MA

ISSN

1078-8743

Print_ISBN

0-7803-5217-3

Type

conf

DOI

10.1109/ASMC.1999.798268

Filename

798268