GaAs MMICs for use in upconverter module for Ka-band OBS satellite transponders

Author

Jeong, Jin-Cheol ; Chang, Dong-pil ; Shin, Dong-Hwan ; Yom, In-Bok

Author_Institution

Global Area Wireless Technol. Group, Taejon, South Korea

Volume

3

fYear

2005

fDate

4-6 Oct. 2005

Abstract

GaAs MMICs has been developed for use in the Upconverter module for On-Board Switching Ka-band Satellite Transponders. There are four kinds of MMICs: an S-band Medium power amplifier, a K-band Medium power amplifier, an S to K-band Mixer, and X to Ku-band frequency doubler. The four chips have been fabricated on a wafer using 0.15μm GaAs p-HEMT technologies. A Upconverter module using the MMICs with a function of the frequency conversion from 3GHz to 20GHz has been developed and showed the RF performance of the 17.1±0.2dB conversion gain, the 0.2nsp-p group delay, the 46.67dBc C/IM₃, and 1.15:1 In/Out VSWR.

Keywords

MMIC frequency convertors; MMIC power amplifiers; frequency multipliers; gallium arsenide; satellite links; transponders; 0.15 micron; 3 to 20 GHz; GaAs; K-band medium power amplifier; Ka-band OBS satellite transponders; MMIC; S to K-band mixer; S-band medium power amplifier; X to Ku-band frequency doubler; p-HEMT technologies; upconverter module; Frequency conversion; Gallium arsenide; K-band; MMICs; Mixers; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Satellites; Transponders;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2005 European

Print_ISBN

2-9600551-2-8

Type

conf

DOI

10.1109/EUMC.2005.1610255

Filename

1610255