DocumentCode
3460980
Title
Influence of envelope impedance termination on RF behaviour of GaN HEMT power devices
Author
Bunz, B. ; Ahmed, A. ; Kompa, G.
Author_Institution
Fachgebiet Hochfrequenztechnik, Kassel Univ., Germany
Volume
3
fYear
2005
fDate
4-6 Oct. 2005
Abstract
The influence of envelope source and load terminations on the RF performance of high power GaN amplifiers is investigated. An error-corrected two-tone measurement system has been developed enabling load- and source pull measurements in the envelope frequency bandwidth. Measured results on a 0.5μm-HEMT with a gate width of 8×125 μ show a variation of 1 dB output power and 8% PAE.
Keywords
HEMT circuits; high-voltage techniques; power amplifiers; 0.5 micron; GaN; HEMT power device; RF behaviour; frequency bandwidth; high power amplifiers; impedance termination; load-and-source pull measurement; Bandwidth; Frequency measurement; Gallium nitride; HEMTs; High power amplifiers; Impedance; Power generation; Power measurement; Radio frequency; Radiofrequency amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2005 European
Print_ISBN
2-9600551-2-8
Type
conf
DOI
10.1109/EUMC.2005.1610259
Filename
1610259
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