On-chip GaAs-HBT broadband-coupled high-bitrate modulator driver TWAs

Author

Meliani, C. ; Rudolph, M. ; Heinrich, W.

Author_Institution

Ferdinand-Braun-Inst. fur Hoechstfrequenztechnik, Berlin, Germany

Volume

3

fYear

2005

fDate

4-6 Oct. 2005

Abstract

A technique to connect two broadband GaAs HBT TWAs is presented. It covers the full range from DC to high frequency and is suitable for high bitrate (40 Gb/s) transmission circuits. This behavior is achieved by modifying the response of one TWA so that it compensates the low-frequency losses. This technique is truly broadband because it uses only elements which are directly connected, and thus is not limited at very low frequencies. Each single TWA delivers 8 dB of broadband gain at a 3dB cut-off-frequency of 26 GHz. Using this interconnect technique, a total broadband gain of 14.5 dB is obtained.

Keywords

III-V semiconductors; bipolar MMIC; gallium arsenide; heterojunction bipolar transistors; integrated circuit interconnections; modulators; system-on-chip; travelling wave amplifiers; 14.5 dB; 26 GHz; 8 dB; GaAs; broadband-coupled high-bitrate modulator driver TWA; interconnect technique; on-chip GaAs-HBT; transmission circuit; Bandwidth; Broadband amplifiers; Distributed amplifiers; Driver circuits; Frequency; Gain; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2005 European

Print_ISBN

2-9600551-2-8

Type

conf

DOI

10.1109/EUMC.2005.1610262

Filename

1610262