• DocumentCode
    3461798
  • Title

    Impedance characteristic of ultrasonic transducer operated as load of MOSFET DC-to-RF power inverter

  • Author

    Suzuki, Taiju ; Mizutani, Yoko ; Ikeda, Hiroaki ; Yoshida, Hirofimi

  • Author_Institution
    Shizuoka Univ., Hamamatsu, Japan
  • Volume
    2
  • fYear
    1996
  • fDate
    5-10 Aug 1996
  • Firstpage
    987
  • Abstract
    To construct a MOSFET power inverter operating at high frequency in the order of 1-5 MHz, the load impedance characteristic, especially, among various loads, for the ultrasonic transducer used for cleaning the surfaces of semiconductor wafers or other industrial materials has rather low impedance at the resonating frequency. However, it is impossible for us to directly measure the impedance of the ultrasonic transducer in water. So, at first, the impedance of the ultrasonic transducer set in air is measured, and then the impedance of the ultrasonic transducer put in water is estimated based on the impedance characteristics measured and calculated in air. The obtained impedance of the ultrasonic transducer was 0.65 Ω in air and 2.7 Ω in water at the resonating frequency. The load impedance measurement is very useful for designing and constructing the MOSFET DC-to-RF inverter. The primary to secondary winding ratio on an output transformer of the inverter is determined to be 3:1 according to the impedance of the ultrasonic transducer. Lowermost and uppermost frequencies for the AFC using the PLL are determined to be 2 MHz and 3.3 MHz, respectively
  • Keywords
    MOSFET; acoustic transducers; electric impedance measurement; invertors; phase locked loops; transformers; ultrasonic transducers; 1 to 5 MHz; MOSFET DC-to-RF power inverter; PLL; high frequency; impedance measurement; industrial materials; load impedance characteristic; output transformer; primary to secondary winding ratio; resonating frequency; semiconductor wafers; surfaces cleaning; ultrasonic transducer; Cleaning; Impedance measurement; Inverters; MOSFET circuits; Power MOSFET; Resonant frequency; Semiconductor materials; Surface impedance; Ultrasonic transducers; Ultrasonic variables measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industrial Electronics, Control, and Instrumentation, 1996., Proceedings of the 1996 IEEE IECON 22nd International Conference on
  • Conference_Location
    Taipei
  • Print_ISBN
    0-7803-2775-6
  • Type

    conf

  • DOI
    10.1109/IECON.1996.566012
  • Filename
    566012