High-performance infrared micro-bolometer arrays manufactured using very large scale heterogeneous integration

Author

Forsberg, F. ; Fischer, Andreas C. ; Stemme, Goran ; Roxhed, Niclas ; Niklaus, Frank ; Ericsson, Per ; Samel, Bjorn

Author_Institution

Microsyst. Technol. Lab., KTH R. Inst. of Technol., Stockholm, Sweden

fYear

2011

fDate

8-11 Aug. 2011

Firstpage

9

Lastpage

10

Abstract

This paper reports on the implementation and characterization of arrays of uncooled infrared bolometers containing mono-crystalline Si/SiGe quantum well (QW) thermistors. The bolometer arrays are integrated on silicon fan-out wafers using very-large scale heterogeneous integration that is compatible with standard CMOS wafers. Infrared bolometer arrays with 320×240 pixels and pixel pitches of 25 μm × 25 μm and 17 μm × 17 μm have been implemented, respectively.

Keywords

CMOS integrated circuits; Ge-Si alloys; VLSI; bolometers; elemental semiconductors; infrared detectors; semiconductor quantum wells; sensor arrays; silicon; thermistors; Si-SiGe; fan out wafers; high performance infrared microbolometer arrays; monocrystalline quantum well thermistors; size 17 mum; size 25 mum; standard CMOS wafers; uncooled infrared bolometers; very large scale heterogeneous integration; Bolometers; Integrated circuits; Micromechanical devices; Silicon; Silicon germanium; Thermistors; SiGe; silicon germanium quantum well; uncooled infrared bolometer; wafer-level heterogeneous integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical MEMS and Nanophotonics (OMN), 2011 International Conference on

Conference_Location

Istanbul

ISSN

2160-5033

Print_ISBN

978-1-4577-0334-8

Type

conf

DOI

10.1109/OMEMS.2011.6031073

Filename

6031073