DocumentCode
3462317
Title
The techniques of the serial and paralleled IGBTs
Author
Chen, Jiann-Fuh ; Lin, Jiunn-Nan ; Ai, Tsu-Hua
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume
2
fYear
1996
fDate
5-10 Aug 1996
Firstpage
999
Abstract
To extend the rating ranges of current and voltage of IGBT, the serial and parallel methods are presented in this paper. For serial techniques, it is found that the voltage sharing can be made to balance by adding an RCD snubber and an adequate balancing resistor in each IGBT in series. For the parallel method, a parallel scheme using a current feedback method is proposed in this paper. The above serial and parallel techniques prove that the currents of paralleled IGBTs and the voltages of IGBTs in series can be balanced by experiments
Keywords
feedback; insulated gate bipolar transistors; residual current devices; resistors; snubbers; RCD snubber; balancing resistor; current feedback method; current rating; paralleled IGBT; serial IGBT; voltage rating; voltage sharing; Capacitors; Costs; Current density; Frequency; Insulated gate bipolar transistors; MOSFETs; Power electronics; Resistors; Snubbers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics, Control, and Instrumentation, 1996., Proceedings of the 1996 IEEE IECON 22nd International Conference on
Conference_Location
Taipei
Print_ISBN
0-7803-2775-6
Type
conf
DOI
10.1109/IECON.1996.566015
Filename
566015
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