Impact of improved mobility and low flicker noise MOS transistors using accumulation mode fully depleted silicon-on-insulator devices

Author

Cheng, Weitao ; Teramoto, Akinobu ; Gaubert, Philippe ; Hirayama, Masaki ; Ohmi, Tadahiro

Author_Institution

New Ind. Creation Hatchery Center, Tohoku Univ., Sendai

fYear

2006

fDate

Oct. 2006

Firstpage

65

Lastpage

67

Abstract

Improved mobility and low flicker noise device characteristics of fully depleted silicon-on-insulator (FD-SOI) MOSFETs are focused in this paper, using normally off accumulation mode device structures. It is demonstrated that the current drivabilities of both accumulation mode FD-SOI n-and p-MOSFETs are improved above 1.3 times compared with inversion mode MOSFETs. The effective mobilities of accumulation mode MOSFETs are improved because of the lower effective electric field at the same gate bias and the bulk current components. The flicker noise characteristics in both accumulation mode FD-SOI n- and p-MOSFETs are about 1 digit lower compared with the inversion mode MOSFETs and show the SOI layer doping concentration dependences

Keywords

MOSFET; doping; electric fields; flicker noise; silicon-on-insulator; MOS transistors; SOI layer doping concentration; flicker noise; fully depleted silicon-on-insulator devices; lower effective electric field; n-MOSFET; normally off accumulation mode device structures; p-MOSFET; 1f noise; Analog integrated circuits; Analog-digital conversion; Analog-digital integrated circuits; Doping; Electrodes; Integrated circuit noise; MOSFET circuits; Oxidation; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306078

Filename

4098022