Title :
The PDSOI accumulation-mode dynamic threshold pMOS with reversed Schottky barrier
Author :
Bi, Jin-Shun ; Hai, Chao-He
Author_Institution :
Inst. of Microelectron., Chinese Acad. & Sci., Beijing
Abstract :
For the first time, partially-depleted silicon-on-insulator (PDSOI) accumulation-mode dynamic threshold (AMDT) pMOS with TiSi2 /n-Si as reverse Schottky barrier (RSB) is reported. By this RSB scheme, AMDT pMOS can be operated beyond 0.7 V, which is the drawback of conventional DT pMOS with gate and body connected (GBC). Compared with normal AM pMOS, AMDT pMOS with RSB reduces threshold voltage by 360 mV and shows excellent subthreshold slope, higher drivability and improved off-state breakdown characteristics
Keywords :
MOSFET; Schottky barriers; semiconductor device breakdown; silicon-on-insulator; 360 mV; PDSOI; accumulation-mode dynamic threshold; off-state breakdown characteristics; pMOS; partially-depleted silicon-on-insulator; reversed Schottky barrier; threshold voltage; Bismuth; Breakdown voltage; Chaos; Conductivity; MOS devices; MOSFETs; Microelectronics; Power supplies; Schottky barriers; Threshold voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306081
