Title :
Strained-si and advanced channel materials on insulator: challenges and opportunities
Author_Institution :
AmberWave Syst. Corp., Salem, NH
Abstract :
Integration of advanced high transport channel materials into Si-based CMOS devices holds great promises for CMOS scaling beyond Moore\´s Law. In this article, various heteroepitaxy approaches and structures for advanced channel material fabrication in "on-insulator" structures was discuss, including both global and localized epitaxy techniques with strained-Si, Ge, III-V etc. The limits, challenges and potential opportunities are addressed
Keywords :
epitaxial growth; semiconductor materials; silicon-on-insulator; CMOS devices; channel materials on insulator; heteroepitaxy approaches; high transport channel materials; on-insulator structures; strained-silicon-on-insulator; CMOS process; CMOS technology; Capacitive sensors; Epitaxial growth; Germanium silicon alloys; III-V semiconductor materials; Insulation; Moore´s Law; Silicon germanium; Uniaxial strain;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306086
