Monitoring of biaxial strained-silicon layers by spectroscopic ellipsometry

Author

Gong, Y. ; Ng, C.M. ; Yang, P. ; Chan, L. ; Wong, T.K.S.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

143

Lastpage

145

Abstract

Spectroscopic ellipsometry (SE) has been extended to the non-destructive, in-line monitoring of biaxial tensile strain in strained silicon (epsiv-Si). SE data from 250nm - 500nm from three epsiv-Si samples were fitted using a new parametric model for semiconductors. By using the E1 peak shift in the fitted dielectric function spectra, the tensile strain in epsiv-Si can be monitored. Strain values obtained are in agreement with Raman measurements

Keywords

ellipsometry; monitoring; semiconductor device manufacture; semiconductor growth; semiconductor thin films; substrates; 250 to 500 nm; E1 peak shift; biaxial strained-silicon layers monitoring; biaxial tensile strain; fitted dielectric function spectra; in line monitoring; nondestructive monitoring; spectroscopic ellipsometry; Capacitive sensors; Dielectric substrates; Ellipsometry; Germanium silicon alloys; Monitoring; Silicon germanium; Spectroscopy; Strain measurement; Tensile strain; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306121

Filename

4098043