High performance high-k/metal gate germanium MOSFETs with shallow junction fabricated by laser thermal process

Author

Zhang, Q.C. ; Huang, J.D. ; Wu, N. ; Chen, G.X. ; Hong, M.H. ; Bera, L.K. ; Zhu, Chunxiang

Author_Institution

Dept. of Electr. & Comput. Eng., Singapore Nat. Univ.

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

146

Lastpage

148

Abstract

Gate-first self-aligned Ge nMOSFET and pMOSFET with metal gate and CVD HfO₂ have been successfully fabricated, using a novel laser thermal process (LTP) S/D activation. Compared with conventional rapid thermal annealing (RTA) activation, LTP provides smaller S/D series resistance with shallower junction depth while maintaining good gate stack integrity. Much improved drive current is obtained on Ge nMOSFET. A high hole mobility (1.9times of universal Si/SiO₂) is also achieved on Ge pMOSFET

Keywords

MOSFET; elemental semiconductors; germanium; hafnium compounds; semiconductor technology; CVD; Ge; HfO₂; S/D activation; drive current improvement; gate first MOSFET; high hole mobility; high-k MOSFET; laser thermal process; metal gate germanium MOSFET; pMOSFET; self-aligned nMOSFET; shallow junction; Annealing; Germanium; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Rapid thermal processing; Silicon; Temperature; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306122

Filename

4098044