Title :
A brief overview of modern high-speed SiGe HBTs
Author_Institution :
Sch. of Electr. Eng., Korea Univ., Seoul
Abstract :
SiGe HBT technology is now widely considered as a strong contender for broadband wireless communication applications owing to its excellent high-speed characteristics as well as the compatibility with the conventional CMOS technology. In this paper, the performance of modern SiGe HBTs is reviewed in terms of the operation speed, noise, and reliability-related issues
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device reliability; SiGe; SiGe heterojunction bipolar transistors; high-speed SiGe HBT; BiCMOS integrated circuits; Broadband communication; CMOS technology; Costs; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Paper technology; Silicon germanium; Technological innovation;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306129
