Title :
Single-grain Si TFTs and circuits for flexible electronics and 3D-ICs
Author :
Ishihara, Ryoichi ; Rana, Vikas ; He, Ming ; Metselaar, Wim ; Beenakker, Kees
Author_Institution :
Fac. of Electr. Eng., Math. & Comput. Sci., Delft Univ. of Technol.
Abstract :
Thin film transistors (TFTs) were fabricated inside a location-controlled, large Si grains through an advanced excimer-laser crystallization with a low temperature process. The field-effect mobility for electrons of the single-grain Si TFTs was as high as 597 cm 2/Vs. CMOS inverters are fabricated inside the location-controlled grain. Propagation delay per stage of 3.1 ns was successfully obtained with a supply voltage of 8V
Keywords :
CMOS integrated circuits; crystallisation; elemental semiconductors; excimer lasers; flexible electronics; invertors; laser beam applications; silicon; thin film circuits; thin film transistors; 3.1 ns; 3D IC; 8 V; CMOS inverters; Si; Si grains; excimer-laser crystallization; field-effect mobility; flexible electronics; location-controlled grain; low temperature process; propagation delay; single-grain Si TFT; thin film transistors; Crystallization; Electron mobility; Flexible electronics; Flexible printed circuits; Inverters; Propagation delay; Temperature; Thin film transistors; Three-dimensional integrated circuits; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306130
