• DocumentCode
    3463090
  • Title

    Operation of a silicon CMOS electron pump

  • Author

    Pierre, M. ; Roche, B. ; Jehl, X. ; Wacquez, R. ; Sanquer, M. ; Vinet, M. ; Feltin, N. ; Devoille, L.

  • Author_Institution
    INAC, Commissariat a l´´energie atomique, Grenoble, France
  • fYear
    2010
  • fDate
    13-18 June 2010
  • Firstpage
    755
  • Lastpage
    756
  • Abstract
    We show the first measurements of a silicon electron pump produced in an industrial CMOS facility. Sample fabrication derived from state-of-the-art microelectronics processes results in mass production with high yield, very small sizes and easy operation up to high frequencies as these pump do not suffer from cross-capacitance. Further data with metrological assessment will be shown, as well as a a comparison of classical and non-adiabatic pumping modes within the same devices.
  • Keywords
    CMOS integrated circuits; micropumps; cross-capacitance; metrological assessment; microelectronics processes; nonadiabatic pumping modes; silicon CMOS electron pump; Electromagnetic measurements; Electrons; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Precision Electromagnetic Measurements (CPEM), 2010 Conference on
  • Conference_Location
    Daejeon
  • Print_ISBN
    978-1-4244-6795-2
  • Type

    conf

  • DOI
    10.1109/CPEM.2010.5543479
  • Filename
    5543479