• DocumentCode
    346313
  • Title

    Circuit styles and strategies for CMOS VLSI design on SOI

  • Author

    Assaderaghi, Fari

  • Author_Institution
    IBM Semicond. Res. & Dev. Center, Hopewell Junction, NY, USA
  • fYear
    1999
  • fDate
    17-17 Aug. 1999
  • Firstpage
    282
  • Lastpage
    287
  • Abstract
    This paper reviews specific circuit styles and strategies employed in the design of CMOS VLSI on partially-depleted (PD) SOI. These strategies address issues and problems that arise on PD SOI circuits (mainly due to the floating-body effect) such as delay hysteresis, noise margin reduction, etc. These circuit approaches also try to utilize SOI-specific properties to achieve a larger performance gain than that of a simple re-map of a bulk design to SOI. Although many aspects of CMOS design pertaining to SOI are covered, the emphasis is on dynamic and static circuits and high-performance SRAMs.
  • Keywords
    CMOS digital integrated circuits; SRAM chips; VLSI; delays; hysteresis; integrated circuit design; integrated circuit noise; silicon-on-insulator; CMOS VLSI design; PD SOI circuits; Si; circuit strategies; circuit styles; delay hysteresis; dynamic circuits; floating-body effect; high-performance SRAMs; noise margin reduction; partially-depleted SOI; static circuits; CMOS technology; Circuit simulation; Diodes; Electrostatic discharge; Microprocessors; Performance gain; Predictive models; Protection; Thick film circuits; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Low Power Electronics and Design, 1999. Proceedings. 1999 International Symposium on
  • Conference_Location
    San Diego, CA, USA
  • Print_ISBN
    1-58113-133-X
  • Type

    conf

  • Filename
    799459