DocumentCode :
346313
Title :
Circuit styles and strategies for CMOS VLSI design on SOI
Author :
Assaderaghi, Fari
Author_Institution :
IBM Semicond. Res. & Dev. Center, Hopewell Junction, NY, USA
fYear :
1999
fDate :
17-17 Aug. 1999
Firstpage :
282
Lastpage :
287
Abstract :
This paper reviews specific circuit styles and strategies employed in the design of CMOS VLSI on partially-depleted (PD) SOI. These strategies address issues and problems that arise on PD SOI circuits (mainly due to the floating-body effect) such as delay hysteresis, noise margin reduction, etc. These circuit approaches also try to utilize SOI-specific properties to achieve a larger performance gain than that of a simple re-map of a bulk design to SOI. Although many aspects of CMOS design pertaining to SOI are covered, the emphasis is on dynamic and static circuits and high-performance SRAMs.
Keywords :
CMOS digital integrated circuits; SRAM chips; VLSI; delays; hysteresis; integrated circuit design; integrated circuit noise; silicon-on-insulator; CMOS VLSI design; PD SOI circuits; Si; circuit strategies; circuit styles; delay hysteresis; dynamic circuits; floating-body effect; high-performance SRAMs; noise margin reduction; partially-depleted SOI; static circuits; CMOS technology; Circuit simulation; Diodes; Electrostatic discharge; Microprocessors; Performance gain; Predictive models; Protection; Thick film circuits; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Low Power Electronics and Design, 1999. Proceedings. 1999 International Symposium on
Conference_Location :
San Diego, CA, USA
Print_ISBN :
1-58113-133-X
Type :
conf
Filename :
799459
Link To Document :
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