DocumentCode :
3463162
Title :
Extraction of R/sub SD/ and /spl Delta/L in deep-submicrometer MOSFETs
Author :
Chang, Yang-Hua ; Lin, Yi-Ling
Author_Institution :
Dept. of Electron. Eng., Nat. Yunlin Univ. of Sci. & Technol.
fYear :
2006
fDate :
23-26 Oct. 2006
Firstpage :
200
Lastpage :
202
Abstract :
In this work, the paper propose two algorithms to extract the gate-bias-dependent parameters including the RSD, the effective channel length reduction DeltaL, and effective channel mobility mueff for deep submicrometer MOSFETs
Keywords :
MOSFET; electron mobility; deep-submicrometer MOSFET; effective channel length reduction; effective channel mobility; gate-bias-dependent parameters; Degradation; Implants; Length measurement; MOSFET circuits; Threshold voltage; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
Type :
conf
DOI :
10.1109/ICSICT.2006.306138
Filename :
4098060
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3463162
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