Title :
Effects of Ge profiles on base transit time and base resistance of SiGe HBT´s
Author :
Song, J. ; Yuan, J.S. ; Schwierz, F. ; Schipanski, D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA
Abstract :
Effects of the shape of Ge profiles in the base of the SiGe bipolar transistor have been evaluated. Analytical equations of base transit time and base resistance taking into account built-in field from nonuniform base doping and Ge bandgap grading are derived. Comparisons of base transit time and base sheet resistance for different Ge profiles are presented
Keywords :
Ge-Si alloys; doping profiles; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; Ge bandgap grading; Ge profiles; SiGe; SiGe HBT; SiGe bipolar transistor; base resistance; base transit time; built-in field; nonuniform base doping; Bipolar transistors; Doping profiles; Electron traps; Equations; Germanium silicon alloys; Heterojunction bipolar transistors; Photonic band gap; Shape; Silicon germanium; Temperature;
Conference_Titel :
Electronics, Circuits, and Systems, 1996. ICECS '96., Proceedings of the Third IEEE International Conference on
Conference_Location :
Rodos
Print_ISBN :
0-7803-3650-X
DOI :
10.1109/ICECS.1996.584522
