DocumentCode
3463189
Title
Effects of Ge profiles on base transit time and base resistance of SiGe HBT´s
Author
Song, J. ; Yuan, J.S. ; Schwierz, F. ; Schipanski, D.
Author_Institution
Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA
Volume
2
fYear
1996
fDate
13-16 Oct 1996
Firstpage
876
Abstract
Effects of the shape of Ge profiles in the base of the SiGe bipolar transistor have been evaluated. Analytical equations of base transit time and base resistance taking into account built-in field from nonuniform base doping and Ge bandgap grading are derived. Comparisons of base transit time and base sheet resistance for different Ge profiles are presented
Keywords
Ge-Si alloys; doping profiles; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; Ge bandgap grading; Ge profiles; SiGe; SiGe HBT; SiGe bipolar transistor; base resistance; base transit time; built-in field; nonuniform base doping; Bipolar transistors; Doping profiles; Electron traps; Equations; Germanium silicon alloys; Heterojunction bipolar transistors; Photonic band gap; Shape; Silicon germanium; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits, and Systems, 1996. ICECS '96., Proceedings of the Third IEEE International Conference on
Conference_Location
Rodos
Print_ISBN
0-7803-3650-X
Type
conf
DOI
10.1109/ICECS.1996.584522
Filename
584522
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