Title :
Device physics and design theory of Si, Ge and Si/sub 1-x/Ge/sub x/ vertical dual carrier field effect transistor integrated circuits on insulator with effective channel length of 5-18nm
Author :
Xu, Y.Z. ; Zhao, Y.F. ; Bai, D. ; Yang, Y.H. ; Yang, R. ; Li, G.H. ; Xu, P. ; Huang, D.H. ; Huang, C.
Author_Institution :
Beijing Microelectron. Inst.
Abstract :
Device physics and design theory of Si, Ge, and Si1-xGe x "complementary vertical dual carrier field effect transistor" (CVDCFET) integrated circuits on insulator for high speed switching and high frequency mixed signal application are studied and compared. The transistor scaling projections of CVDCFET are presented and compared with the scaling projections of CMOS as given in the 2005 edition of ITRS
Keywords :
CMOS integrated circuits; field effect transistors; integrated circuit design; mixed analogue-digital integrated circuits; CMOS integrated circuit; SiGe; complementary vertical dual carrier field effect transistor; design theory; device physics; high frequency mixed signal application; high speed switching; integrated circuits on insulator; transistor scaling projections; Application specific integrated circuits; Charge carrier density; Doping; FET integrated circuits; Frequency; High speed integrated circuits; Insulation; Physics; Signal design; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306162
