Device physics and design theory of Si, Ge and Si/sub 1-x/Ge/sub x/ vertical dual carrier field effect transistor integrated circuits on insulator with effective channel length of 5-18nm

Author

Xu, Y.Z. ; Zhao, Y.F. ; Bai, D. ; Yang, Y.H. ; Yang, R. ; Li, G.H. ; Xu, P. ; Huang, D.H. ; Huang, C.

Author_Institution

Beijing Microelectron. Inst.

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

206

Lastpage

208

Abstract

Device physics and design theory of Si, Ge, and Si_1-xGe _x "complementary vertical dual carrier field effect transistor" (CVDCFET) integrated circuits on insulator for high speed switching and high frequency mixed signal application are studied and compared. The transistor scaling projections of CVDCFET are presented and compared with the scaling projections of CMOS as given in the 2005 edition of ITRS

Keywords

CMOS integrated circuits; field effect transistors; integrated circuit design; mixed analogue-digital integrated circuits; CMOS integrated circuit; SiGe; complementary vertical dual carrier field effect transistor; design theory; device physics; high frequency mixed signal application; high speed switching; integrated circuits on insulator; transistor scaling projections; Application specific integrated circuits; Charge carrier density; Doping; FET integrated circuits; Frequency; High speed integrated circuits; Insulation; Physics; Signal design; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306162

Filename

4098062