Study of body contact of partial depleted SOI NMOS devices

SOI partially depleted NMOS devices with C shape gate, H shape gate, BTS, and T shape gate body contact are fabricated, and their ability to suppress kink effect is studied. C shape gate body contact device expresses better performance to inhibit kink effect than H shape and BTS body contact devices, while T shape device shows the worst performance. As the channel width increases, all partially depleted NMOS devices express kink effect because of the larger body contact resistance of the p type neutral region under the gate. Then the numbers of body contact and the distance of body contact are two major factors to affect devices´ ability to suppress kink effect