Title :
Improvement of thermal stability of multi-finger power SiGe HBTs using emitter-ballasting-resistor-free designs
Author :
Wan-Rong, Zhang ; Dong-Yue, Jin ; Jing-wei, Yang ; Li-Jian, He ; Yong-Ping, Sha ; Yang, Wang ; Wei, Zhang
Author_Institution :
Sch. of Electron. Inf. & Control Eng., Beijing Univ. of Technol.
Abstract :
For power bipolar transistors, the emitter-ballasting-resistor is usually used to improve the thermal stability. However, the ballasting-resistors degrade the output power, power gain, power-added-efficiency (PAE) of the transistor. In this paper, the thermal stability can be improved substantially by adjusting either the spacing or length of the emitter fingers without using ballasting resistors. The temperature rise at the device center of the space-adjusted HBT is suppressed by reducing heat flow from adjacent fingers, and that of the length-adjusted HBT is suppressed by reducing heat generation in the region
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; power bipolar transistors; thermal stability; SiGe; emitter-ballasting-resistor-free designs; multifinger power HBT; power bipolar transistors; thermal stability; Bipolar transistors; Electronic ballasts; Fingers; Germanium silicon alloys; Heterojunction bipolar transistors; Power generation; Silicon germanium; Space heating; Thermal degradation; Thermal stability;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306167
