Title :
Analysis of SOI RESURF structure with charge sharing concept
Author :
Yang, Wenwei ; Yu, Yuehui ; Yu, Zhiping ; Tian, Lilin
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing
Abstract :
A simple one-dimensional (1-D) analytical method is proposed to analyze the breakdown properties of silicon-on-insulator (SOI) reduced surface field (RESURF) structure. Based on charge sharing concept, this approach transforms the inherent two-dimensional (2-D) effects into a simple 1-D equivalent depending on device parameters. It is first found that given the silicon thickness, the thicker buried oxide (BOX) maybe unexpectedly reduce the breakdown voltage. Device designers could minimize the on-resistance and maximize the breakdown voltage through the optimal condition provided by this method, which is suitable both in the partial and full depletion cases. The analytical results are verified by the comparisons with experimental data and numerical simulations
Keywords :
buried layers; electric breakdown; numerical analysis; silicon-on-insulator; 1D analytical method; SOI RESURF structure; breakdown properties; breakdown voltage; charge sharing concept; numerical simulations; reduced surface field structure; silicon-on-insulator; thicker buried oxide; Diodes; Doping; Electric breakdown; Information analysis; Integrated circuit technology; Isolation technology; Microelectronics; Numerical simulation; Silicon; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306174
