DocumentCode :
3463505
Title :
A 2kV ESD-Protected 18GHz LNA with 4dB NF in 0.13μm CMOS
Author :
Cao, Yiqun ; Issakov, Vadim ; Tiebout, Marc
Author_Institution :
Infineon Technol., Munich
fYear :
2008
fDate :
3-7 Feb. 2008
Firstpage :
194
Lastpage :
606
Abstract :
As the frequency spectrum below 10GHz is becoming extremely crowded alternative higher frequency bands are getting a large attention despite their associated high dispersion losses and need for a direct line-of-sight. Recently, numerous published work have targeted the free spectrum at 60GHz, but near-future commercial applications may prefer the frequency bands at 17 to 17.2GHz (ETSI) and/or 24 to 24.2GHz (ISM band) to enable the use of cheap package options (VQFN or flip-chip), and classical board- and antenna-mounting techniques.
Keywords :
CMOS integrated circuits; low noise amplifiers; CMOS; LNA; antenna-mounting; board-mounting; frequency spectrum; Clamps; Electrical resistance measurement; Electrostatic discharge; Frequency; Inductors; MOSFETs; Noise measurement; Protection; Semiconductor device measurement; Thyristors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical Papers. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2010-0
Electronic_ISBN :
978-1-4244-2011-7
Type :
conf
DOI :
10.1109/ISSCC.2008.4523123
Filename :
4523123
Link To Document :
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