Title :
Modeling and characterization of a merged PiN Schottky diodes with semi-super junction structure
Author :
Xiaochuan, Deng ; Bo, Zhang ; Zhaoji, Li ; Wanjun, Chen
Author_Institution :
Center of IC Design, China Univ. of Electron. Sci. & Technol., Chengdu
Abstract :
In this paper a novel merged PiN Schottky rectifier structure based on semi-super junction technique, which is the combination of super junction (SJ) structure and n-bottom assisted layer (BAL), is proposed and demonstrated for a power-switching device. Optimal diode design is obtained exploiting a two dimension analytical model. Devices such as the blocking characteristic, the forward voltage-drop and the reverse recovery are analyzed with two-dimensional numerical simulations and compared with conventional SJ MPS and PiN diodes. The proposed structure without increasing the process difficulty and the cost is very attractive for high voltage and freewheeling rectifiers due to the low forward voltage drop and the soft recovery
Keywords :
Schottky diodes; p-i-n diodes; rectifiers; semiconductor device models; semiconductor junctions; freewheeling rectifiers; high voltage rectifiers; low forward voltage drop; merged PiN Schottky diodes; merged PiN Schottky rectifier structure; n-bottom assisted layer; optimal diode design; power-switching device; semisuper junction structure; semisuper junction technique; super junction structure; Analytical models; Breakdown voltage; Costs; Electron mobility; Integrated circuit modeling; Low voltage; Numerical simulation; Power electronics; Rectifiers; Schottky diodes;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306207
