DocumentCode
3463686
Title
An advanced bipolar device-the fully depleted camel structure
Author
Al-Bustani, A. ; Yaseen, N.M.
Author_Institution
Dept. of Electr. & Electron. Eng., Univ. of Central Lancashire, Preston, UK
Volume
2
fYear
1996
fDate
13-16 Oct 1996
Firstpage
992
Abstract
Camel devices are advanced bipolar structures with fully depleted base layers. In this paper, an analysis is presented to study these new devices and to account for the effect(s) of design parameters such as the intermediate layer width, the emitter doping density and effective length on the devices´ performance. The results obtained show a strong dependence of the transistor characteristics on the design parameters
Keywords
bipolar transistors; semiconductor device models; advanced bipolar device; design parameters; effective length; emitter doping density; fully depleted base layers; fully depleted camel structure; intermediate layer width; transistor characteristics; Current density; Cutoff frequency; Equations; Linear discriminant analysis; Microwave transistors; Nonhomogeneous media; Semiconductor devices; Semiconductor impurities; Thermionic emission; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits, and Systems, 1996. ICECS '96., Proceedings of the Third IEEE International Conference on
Conference_Location
Rodos
Print_ISBN
0-7803-3650-X
Type
conf
DOI
10.1109/ICECS.1996.584553
Filename
584553
Link To Document