Investigation of Ru/TaN on low dielectric constant material with k=2.7

Author

Tan, Jing-jing ; Xie, Qi ; Zhou, Mi ; Chen, Tao ; Jiang, Yu-Long ; Qu, Xin-Ping

Author_Institution

Dept. of Microelectron., Fudan Univ., Shanghai

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

339

Lastpage

341

Abstract

The properties of the ruthenium (Ru)/ TaN as copper diffusion barrier in copper low dielectric constant material(low-k) metallization were studied by sheet resistance, X-ray diffraction (XRD), X-ray photoelectron spectroscopy(XPS), transmission electron microscopy (TEM) and electrical current leakage-voltage tests. Cu, Ru and TaN thin films were deposited by ion beam sputtering technique. Sheet resistance and XRD results demonstrate that there was little inter-diffusion with ascending annealing temperatures. The XPS spectra indicate that Ru was partially oxidized and no inter reaction with low-k was observed. TEM images show that copper appeared into barriers when the sample was annealed at 400degC/30min, and it is revealed that copper diffused into low-k at 500degC/30min from the I-V test

Keywords

X-ray diffraction; X-ray photoelectron spectra; dielectric materials; metallisation; permittivity; ruthenium; tantalum compounds; transmission electron microscopy; Ru-TaN; X-ray diffraction; X-ray photoelectron spectroscopy; copper diffusion barrier; dielectric constant; electrical current leakage-voltage tests; metallization; sheet resistance; transmission electron microscopy; Annealing; Copper; Dielectric constant; Dielectric materials; Electric resistance; Metallization; Sheet materials; Sputtering; X-ray diffraction; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306223

Filename

4098102