DocumentCode
3463939
Title
A 1.2V 4.5mW 10b 100MS/s Pipeline ADC in a 65nm CMOS
Author
Boulemnakher, M. ; Andre, Elisabeth ; Roux, Jean-Francois ; Paillardet, F.
Author_Institution
STMicroelectronics, Crolles
fYear
2008
fDate
3-7 Feb. 2008
Firstpage
250
Lastpage
611
Abstract
A low-power 1.2 V pipelined ADC is implemented in a 65 nm CMOS process to achieve 10b resolution at 100 MS/s based on the use of a dedicated thin-oxide high-performance analog (HPA) MOS transistor. The pipeline ADC is composed of eight 1.5b pipelined stages followed by a 2b flash converter as the last stage. In order to optimize the power consumption, the capacitances and the bias current of each stage have been scaled down along the pipeline chain. Measurement results of this ADC revealed a SNDR of 59 dB with a power dissipation of 4.5 mW. The core occupies 0.07 mm2, and 0.1 mm2 with the reference.
Keywords
CMOS analogue integrated circuits; MOSFET; analogue-digital conversion; low-power electronics; pipeline processing; CMOS process; flash converter; low-power pipelined ADC; power 4.5 mW; size 65 nm; thin-oxide high-performance analog MOS transistor; voltage 1.2 V; Bandwidth; Circuits; Frequency conversion; Latches; Low voltage; MOS capacitors; MOSFETs; Pipelines; Sampling methods; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical Papers. IEEE International
Conference_Location
San Francisco, CA
Print_ISBN
978-1-4244-2010-0
Electronic_ISBN
978-1-4244-2011-7
Type
conf
DOI
10.1109/ISSCC.2008.4523151
Filename
4523151
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