• DocumentCode
    3464102
  • Title

    HfSiON gate dielectric technology for CMOSFET application

  • Author

    Aoyama, Tomonori ; Sato, Motoyuki ; Sekine, Katsuyuki ; Nagatomo, Koji ; Watanabe, Takeshi ; Tsuchiya, Yoshinori ; Kobayashi, Takuya ; Kawanaka, Shigeru ; Azuma, Atsushi ; Takayanagi, Mariko ; Toyoshima, Yoshiaki ; Koyama, Masato ; Nishiyama, Akira ; Eguc

  • Author_Institution
    Process & Manuf. Eng. Center, Toshiba Corp., Yokohama
  • fYear
    2006
  • fDate
    23-26 Oct. 2006
  • Firstpage
    380
  • Lastpage
    383
  • Abstract
    Vth control technology of HfSiON gate dielectrics by channel engineering using counter ion implantation method and fluorine or nitrogen ion implantation method are described. Current Ni-FUSI gate technology is also mentioned. Moreover, the authors explain breakdown mechanism of poly-Si/HfSiON/SiO2 gate stacks
  • Keywords
    MOSFET; dielectric thin films; hafnium compounds; ion implantation; silicon compounds; CMOSFET; FUSI gate technology; HfSiON-SiO2; counter ion implantation; gate dielectrics; CMOS technology; CMOSFETs; Channel bank filters; Counting circuits; Dielectrics; Hafnium; Ion implantation; Leakage current; Nitrogen; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0160-7
  • Electronic_ISBN
    1-4244-0161-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.2006.306257
  • Filename
    4098114
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3464102