DocumentCode :
3464102
Title :
HfSiON gate dielectric technology for CMOSFET application
Author :
Aoyama, Tomonori ; Sato, Motoyuki ; Sekine, Katsuyuki ; Nagatomo, Koji ; Watanabe, Takeshi ; Tsuchiya, Yoshinori ; Kobayashi, Takuya ; Kawanaka, Shigeru ; Azuma, Atsushi ; Takayanagi, Mariko ; Toyoshima, Yoshiaki ; Koyama, Masato ; Nishiyama, Akira ; Eguc
Author_Institution :
Process & Manuf. Eng. Center, Toshiba Corp., Yokohama
fYear :
2006
fDate :
23-26 Oct. 2006
Firstpage :
380
Lastpage :
383
Abstract :
Vth control technology of HfSiON gate dielectrics by channel engineering using counter ion implantation method and fluorine or nitrogen ion implantation method are described. Current Ni-FUSI gate technology is also mentioned. Moreover, the authors explain breakdown mechanism of poly-Si/HfSiON/SiO2 gate stacks
Keywords :
MOSFET; dielectric thin films; hafnium compounds; ion implantation; silicon compounds; CMOSFET; FUSI gate technology; HfSiON-SiO2; counter ion implantation; gate dielectrics; CMOS technology; CMOSFETs; Channel bank filters; Counting circuits; Dielectrics; Hafnium; Ion implantation; Leakage current; Nitrogen; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
Type :
conf
DOI :
10.1109/ICSICT.2006.306257
Filename :
4098114
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3464102
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