Title :
Analysis of 1/f noise for CMOS with high-k gate dielectrics
Author :
Ohguro, T. ; Kojima, K. ; Iijima, R. ; Watanabe, T. ; Takayanagi, M. ; Momose, H.S. ; Ishimaru, K. ; Ishiuchi, H.
Author_Institution :
Center for Semicond. Res. & Dev., Toshiba Corp. Semicond. Co., Yokohama
Abstract :
HfSiON is one of the most promising alternative gate dielectric materials for low standby power (LSTP) application. Recently, DC performance, gate leakage current, and reliability have been reported. However, study of analog performances of CMOS with HfSiON gate dielectrics is not sufficient. In this paper, the authors discuss 1/f noise and matching of CMOS with HfSiON gate dielectrics and predict trends in Svg with technology scaling according to the ITRS roadmap based on Mikoshiba´s model
Keywords :
1/f noise; CMOS integrated circuits; dielectric materials; hafnium compounds; leakage currents; semiconductor device reliability; silicon compounds; 1/f noise; CMOS devices; HfSiON; gate leakage current; high-k gate dielectrics; Dielectrics; Electrodes; Hafnium; Leakage current; MOCVD; MOS devices; MOSFET circuits; Plasma immersion ion implantation; Plasma sources; Semiconductor device noise;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306262
