DocumentCode
346426
Title
Switching performance of 3.3 kV HVIGBTs with PT and NPT structures
Author
Um, Kee-Ju ; Suh, Bum-Seok ; Hyun, Dong-seok
Author_Institution
Dept. of Electr. Eng., Hanyang Univ., Seoul, South Korea
Volume
1
fYear
1999
fDate
1999
Firstpage
708
Abstract
This paper presents a comparative study of switching performance using PT and NPT HVIGBT modules rated 3.3 kV from two different manufacturers. The various numerical data obtained experimentally under hard switching condition considering practical application points of view are given. The evaluation would be the basis for achieving better switching characteristics and reliability
Keywords
insulated gate bipolar transistors; power semiconductor switches; switching; 3.3 kV; HVIGBT; NPT structures; PT structures; hard switching condition; nonpunch through HVIGBT; punch through HVIGBT; reliability; switching performance; Buffer layers; Geometry; Insulated gate bipolar transistors; MOSFET circuits; Power system reliability; Pulp manufacturing; Semiconductor device manufacture; Switching loss; Tail; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Conference, 1999. Thirty-Fourth IAS Annual Meeting. Conference Record of the 1999 IEEE
Conference_Location
Phoenix, AZ
ISSN
0197-2618
Print_ISBN
0-7803-5589-X
Type
conf
DOI
10.1109/IAS.1999.800027
Filename
800027
Link To Document