Title :
Switching performance of 3.3 kV HVIGBTs with PT and NPT structures
Author :
Um, Kee-Ju ; Suh, Bum-Seok ; Hyun, Dong-seok
Author_Institution :
Dept. of Electr. Eng., Hanyang Univ., Seoul, South Korea
Abstract :
This paper presents a comparative study of switching performance using PT and NPT HVIGBT modules rated 3.3 kV from two different manufacturers. The various numerical data obtained experimentally under hard switching condition considering practical application points of view are given. The evaluation would be the basis for achieving better switching characteristics and reliability
Keywords :
insulated gate bipolar transistors; power semiconductor switches; switching; 3.3 kV; HVIGBT; NPT structures; PT structures; hard switching condition; nonpunch through HVIGBT; punch through HVIGBT; reliability; switching performance; Buffer layers; Geometry; Insulated gate bipolar transistors; MOSFET circuits; Power system reliability; Pulp manufacturing; Semiconductor device manufacture; Switching loss; Tail; Voltage;
Conference_Titel :
Industry Applications Conference, 1999. Thirty-Fourth IAS Annual Meeting. Conference Record of the 1999 IEEE
Conference_Location :
Phoenix, AZ
Print_ISBN :
0-7803-5589-X
DOI :
10.1109/IAS.1999.800027
