Title :
Power loss and junction temperature analysis of power semiconductor devices
Author :
Xu, Dewei ; Lu, Haiwei ; Huang, Lipei ; Azuma, Satoshi ; Kimata, Masahiro ; Uchida, Ryohei
Author_Institution :
Dept. of Electr. Eng., Tsinghua Univ., Beijing, China
Abstract :
A new developed electro-thermal calculation method is implemented to estimate the power loss and working temperature of IGBT devices. Based on the measurement of IGBT characteristics, the exact estimation of power loss considering the junction temperature is introduced. Then the thermal network is used to calculate the working temperature. The comparison between experiment and calculation results shows that this method is effective as a designing step with only the time domain voltage and current data obtained from simulation results
Keywords :
insulated gate bipolar transistors; losses; p-n junctions; power bipolar transistors; semiconductor device models; thermal analysis; time-domain analysis; IGBT characteristics; designing step; electro-thermal calculation method; junction temperature analysis; power loss estimation; power semiconductor devices; time domain current data; time domain voltage data; Circuit simulation; Insulated gate bipolar transistors; Power semiconductor devices; Power semiconductor switches; Pulse width modulation; Semiconductor diodes; Temperature; Thermal resistance; Time domain analysis; Voltage;
Conference_Titel :
Industry Applications Conference, 1999. Thirty-Fourth IAS Annual Meeting. Conference Record of the 1999 IEEE
Conference_Location :
Phoenix, AZ
Print_ISBN :
0-7803-5589-X
DOI :
10.1109/IAS.1999.800030
