• DocumentCode
    3464322
  • Title

    Dual-work-function modulation for Ni-FUSI metal gate CMOS technology

  • Author

    Zhou, Huajie ; Xu, Qiuxia

  • Author_Institution
    Inst. of Microelectron., Chinese Acad. of Sci., Beijing
  • fYear
    2006
  • fDate
    Oct. 2006
  • Firstpage
    430
  • Lastpage
    432
  • Abstract
    This paper investigates the work function adjustment of Ni-FUSI metal gate. It is obvious that implanting dopant into poly-Si before silicidation can modulate the work function of Ni-FUSI metal gate efficiently. With the implantation of P-type or N-type dopants, such as BF2 and As or P, the work function of Ni-FUSI metal gate can be made higher or lower to satisfy the requirement of PMOS or NMOS
  • Keywords
    CMOS integrated circuits; MOSFET; arsenic; bismuth compounds; doping; nickel; phosphorus; work function; As; BF2; CMOS technology; FUSI metal gate; Ni; P; work function modulation; CMOS technology; Capacitance-voltage characteristics; Fabrication; MOS capacitors; MOS devices; Metals industry; Microelectronics; Nickel; Silicidation; Silicides;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0160-7
  • Electronic_ISBN
    1-4244-0161-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.2006.306292
  • Filename
    4098127
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3464322