Title :
A flexible stress sensor using a sub-10μm silicon chip technology
Author :
Ferwana, S. ; Angelopoulos, E.A. ; Endler, S. ; Harendt, Christine ; Burghartz, Joachim N.
Author_Institution :
Inst. for Microelectron. Stuttgart (IMS CHIPS), Stuttgart, Germany
Abstract :
Here, we present a flexible sensor based on a stack of two ultra-thin IC-chips, exploiting the excellent chip thickness control in Chipfilm™ technology. The sensor consists of an almost stress-compensated bottom chip and a stress-sensitive top chip that are in good mechanical and thermal contact. Moreover, for the first time, we demonstrate that the chip thickness can be reduced to 10 μm, with the bulk Si body measuring only 7 μm, thus allowing for flexible chipstacks measuring only 20 μm in height. Furthermore, we demonstrate a self-aligned Through-Silicon Via (TSV) process in Chipfilm™ enabling 3D integration of such ultra-thin flexible chip pairs.
Keywords :
elemental semiconductors; flexible electronics; silicon; strain sensors; stress measurement; three-dimensional integrated circuits; 3D integration; Chipfilm technology; Si; bulk Si body; chip thickness control; flexible chipstacks; flexible stress sensor; self-aligned through-silicon via process; silicon chip technology; size 7 mum to 20 mum; stress-compensated bottom chip; stress-sensitive top chip; ultra-thin IC-chips; Cavity resonators; Etching; Semiconductor device measurement; Silicon; Stacking; Stress; Substrates; 3D integration; ChipfilmTM Technology; Flexible stress sensor; TSV; stress free chips; ultra-thin chips;
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013 Transducers & Eurosensors XXVII: The 17th International Conference on
Conference_Location :
Barcelona
DOI :
10.1109/Transducers.2013.6627345