Title :
Fabrication of novel silicon-on-insulator substrates using plasma-based technology
Author_Institution :
Dept. of Phys. & Mater. Sci., City Univ. of Hong Kong, Kowloon
Abstract :
Plasma-based nanotechnologies benefit the development of deep-submicrometer microelectronic devices. Recent works conducted in our laboratory pertaining to the production of novel silicon-on-insulator (SOI) materials to reduce the self-heating effects and the use of plasma hydrogenation to conduct ion-cutting are described in this invited paper
Keywords :
cutting; hydrogenation; nanotechnology; plasma materials processing; silicon-on-insulator; substrates; Plasma-based nanotechnologies; SOI materials; deep-submicrometer microelectronic devices; ion-cutting process; plasma hydrogenation; self-heating effects; silicon-on-insulator substrates; Annealing; Biological materials; Conducting materials; Electric breakdown; Fabrication; Plasma devices; Plasma materials processing; Semiconductor materials; Silicon on insulator technology; Temperature;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306296
