DocumentCode
3464390
Title
Fabrication of novel silicon-on-insulator substrates using plasma-based technology
Author
Chu, Paul K.
Author_Institution
Dept. of Phys. & Mater. Sci., City Univ. of Hong Kong, Kowloon
fYear
2006
fDate
Oct. 2006
Firstpage
444
Lastpage
447
Abstract
Plasma-based nanotechnologies benefit the development of deep-submicrometer microelectronic devices. Recent works conducted in our laboratory pertaining to the production of novel silicon-on-insulator (SOI) materials to reduce the self-heating effects and the use of plasma hydrogenation to conduct ion-cutting are described in this invited paper
Keywords
cutting; hydrogenation; nanotechnology; plasma materials processing; silicon-on-insulator; substrates; Plasma-based nanotechnologies; SOI materials; deep-submicrometer microelectronic devices; ion-cutting process; plasma hydrogenation; self-heating effects; silicon-on-insulator substrates; Annealing; Biological materials; Conducting materials; Electric breakdown; Fabrication; Plasma devices; Plasma materials processing; Semiconductor materials; Silicon on insulator technology; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306296
Filename
4098131
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