Title :
Ultimate top-down etching processes for future nanoscale devices
Author :
Samukawa, Seiji ; Endo, Kazuhiro
Author_Institution :
Inst. of Fluid Sci., Tohoku Univ., Sendai
Abstract :
Our newly developed neutral beam (NB) etching could firstly accomplish the damage-free (defect-free and smooth surface) fabrication of high aspect rectangular Si-Fins. The fabricated FinFETs realize higher device performance (higher electron mobility) than that using a conventional reactive ion etching. The improved mobility is well explained by the atomically flatness of the neutral beam etched surfaces. Our new results strongly support the effectiveness of the NB technology for the nano-scale CMOS fabrication
Keywords :
MOSFET; etching; nanotechnology; FinFET; damage-free fabrication; higher electron mobility; nano-scale CMOS fabrication; nanoscale devices; neutral beam etching; top-down etching processes; CMOS technology; Electrodes; Etching; Fabrication; FinFETs; Nanoscale devices; Oxidation; Plasma applications; Plasma chemistry; Plasma immersion ion implantation;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306301
