Thermal stability of NiSi controlled by post silicidation metal doping method

Author

Nagahiro, K. ; Tsutsui, K. ; Shiozawa, T. ; Xiang, R. ; Ahmet, P. ; Kakushima, K. ; Okuno, Y. ; Matsumoto, M. ; Kubota, M. ; Iwai, H.

Author_Institution

Frontier Collaborative Res. Center, Tokyo Inst. of Technol., Yokohama

fYear

2006

fDate

Oct. 2006

Firstpage

466

Lastpage

468

Abstract

Silicidation process and effects of various kinds of additive metals for the improvement of thermal stability of Ni silicide were examined carefully for the 45 nm node. In order to obtain heat resistant NiSi, introduction of various metal layers introduced to top or bottom (interface of Ni/Si) of Ni on Si were investigated. However, we couldn\´t have any improvement in the thermal stability by any additive metals introduced. Base on that result, we proposed "post silicidation metal doping" (PSMD) method. As the result of the comprehensive experiments for 7 kinds of the additive metal, it was suggested that the combination of preformed NiSi and Pt or Hf addition is the solution to improve the NiSi thermal stability

Keywords

alloying additions; hafnium; nickel alloys; platinum; semiconductor doping; silicon alloys; thermal stability; post silicidation metal doping method; silicidation process; thermal stability; Additives; Annealing; CMOS technology; Conductivity; Doping; Hafnium; Silicidation; Silicides; Substrates; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306302

Filename

4098137