Title :
Electrical properties study of Ni (Pt)-silicide/Si contacts
Author :
Huang, Yifei ; Jiang, Yu-Long ; Ru, Guo-Ping ; Lu, Fang ; Cai, Qijia ; Cao, Shihai ; Li, Bing-Zong
Author_Institution :
Sch. of Microelectron., Fudan Univ., Shanghai
Abstract :
The electrical properties of Ni (Pt)-silicide/Si contact is studied and it is revealed that the Schottky barrier contact obeys a complicated two Gauss distribution. It is demonstrated that the Pt interface layer can not only improve NiSi phase thermal stability but also improve contact homogeneity
Keywords :
Gaussian distribution; Schottky barriers; nickel compounds; ohmic contacts; silicon; thermal stability; Gauss distribution; NiPt-Si; Schottky barrier contact; electrical properties; improved contact homogeneity; interface layer; thermal stability; Contacts; Gaussian distribution; Schottky barriers; Silicides; Silicon; Substrates; Temperature dependence; Temperature distribution; Thermal stability; X-ray scattering;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306305
