Measurement of Nano-Displacement Based on In-Plane Suspended-Gate MOSFET Detection Compatible with a Front-End CMOS Process

Author

Colinet, E. ; Durand, C. ; Audebert, P. ; Renaux, P. ; Mercier, D. ; Duraffourg, L. ; Ollier, E. ; Casset, F. ; Ancey, P. ; Buchaillot, L. ; Ionescu, A.M.

Author_Institution

CEA-LETI, Grenoble

fYear

2008

fDate

3-7 Feb. 2008

Firstpage

332

Lastpage

617

Abstract

The first front-end CMOS co-integration based on the lateral SGMOSFET presented in this paper demonstrates the benefit of a co-integration approach for NEMS devices. Performance using this device is compared to that obtained with a standalone ASIC. The next step will consist of replacing equivalently the input transistor of the ASIC cascode structure by the SGMOSFET.

Keywords

CMOS integrated circuits; MOSFET; displacement measurement; nanoelectronics; ASIC cascode structure; NEMS devices; front-end CMOS co-integration; in-plane suspended-gate MOSFET detection; lateral SGMOSFET; nanodisplacement measurement; standalone ASIC comparison; Application specific integrated circuits; Bandwidth; CMOS process; CMOS technology; Capacitance measurement; MOSFET circuits; Micromechanical devices; Nanoelectromechanical systems; Noise measurement; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical Papers. IEEE International

Conference_Location

San Francisco, CA

Print_ISBN

978-1-4244-2010-0

Electronic_ISBN

978-1-4244-2011-7

Type

conf

DOI

10.1109/ISSCC.2008.4523192

Filename

4523192