Title :
Self-timed MESFET gallium arsenide circuit techniques for a direct digital frequency synthesiser
Author :
Lachowicz, S. ; Eshraghian, K. ; Hollreiser, M. ; Pfleiderer, H.-J.
Author_Institution :
Centre for Very High Speed Microelectron. Syst., Edith Cowan Univ., Joondalup, WA, Australia
Abstract :
Frequency synthesisers are the key to precise time, frequency and phase in communications transmitters and receivers as well as in radar pulse compression. Digital implementations such as direct digital synthesis (DDS) are frequently selected because of their inherent advantages. Limiting factors are the spurious frequencies, which are generated due to quantisation effects and an output frequency limited to less than half of the sampling frequency according to the sampling theorem and taking into account a realisable anti-image filter. The fundamental part of any DDS architecture is a periodically overflowing phase-accumulator generating linearly increasing phase values. In this paper we review an efficient self-timed highly-pipelined accumulator architecture implemented in GaAs MESFET technology
Keywords :
III-V semiconductors; MESFET integrated circuits; direct digital synthesis; field effect logic circuits; gallium arsenide; DDS architecture; GaAs; GaAs MESFET circuit techniques; anti-image filter; communications receivers; communications transmitters; direct digital frequency synthesiser; direct digital synthesis; periodically overflowing phase-accumulator; quantisation effects; radar pulse compression; sampling frequency; self-timed highly-pipelined accumulator architecture; Circuit synthesis; Filters; Frequency synthesizers; Gallium arsenide; MESFET circuits; Pulse compression methods; Quantization; Radar; Sampling methods; Transmitters;
Conference_Titel :
Signal Processing and Its Applications, 1999. ISSPA '99. Proceedings of the Fifth International Symposium on
Conference_Location :
Brisbane, Qld.
Print_ISBN :
1-86435-451-8
DOI :
10.1109/ISSPA.1999.815738
