DocumentCode :
3464604
Title :
The particle-size-controllable growth of silica sol abrasive for chemical mechanical polishing
Author :
Gao, Peng ; Liu, Yuling ; Yao, Suying ; Zhang, Jianxin
Author_Institution :
Sch. of Electron. & Inf. Eng., Tianjin Univ.
fYear :
2006
fDate :
23-26 Oct. 2006
Firstpage :
492
Lastpage :
494
Abstract :
In the further development of chemical mechanical polishing (CMP) process, it needs badly to have a sort of low polydispersion index (PDI) and high purity silica sol nanometer abrasives which can be stable for a long time. In this paper, through a large number of experiments, we have proposed the optimization process schemes and pyramid shape grow mode in preparing large particle size silica sol, realizing particle size controllable to grow, producing the silica sol of different specifications: 10 ~ 15nm, 20 ~ 25 nm, 30 ~ 40nm, 50 ~ 60nm, 80 ~ 90nm, 110 ~ 130nm, etc, among, the silica sol with large particle size has a low viscidity (1.431mpa middot s), low polydispersion index (1.002), high mechanical intension, satisfying for the need of mechanical polishing of CMP
Keywords :
abrasives; chemical mechanical polishing; nanoparticles; particle size; silicon compounds; sols; SiO2; chemical mechanical polishing; nanometer abrasives; optimization process schemes; particle size controllable growth; pyramid shape grow mode; silica sol abrasive; Abrasives; Chemical engineering; Chemical processes; Chemical technology; Microelectronics; Planarization; Resins; Shape control; Silicon compounds; Slurries;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
Type :
conf
DOI :
10.1109/ICSICT.2006.306311
Filename :
4098146
Link To Document :
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