Title :
The elimination of poly stringer in double poly AMS technology development
Author :
Zoolfakar, Ahmad Sabirin ; Khairul Amalin Abd Rahman ; Azlina Mohd Zain ; Keating, Richard A.
Author_Institution :
Technol. Dev., MIMOS, Berhad
Abstract :
Defects found during the fabrication of poly-insulator-poly (PIP) analog mixed signal (AMS) device using 0.35mum CMOS technology process had revealed the existence of poly stringers. The formation of stringer is due to topography of the double poly PIP capacitor structure. The challenge in eliminating the stringer is to develop an optimal polysilicon gate etch process that can remove the stringer completely as well as maintaining a good polysilicon gate profile at logic CMOS area. Three types of approaches have been experimented to solve the stringer issue. It is proven that combining a thinner bottom plate (poly1) film together with an optimized polysilicon gate etching condition had been successful in eliminating the stringer completely
Keywords :
CMOS analogue integrated circuits; capacitors; mixed analogue-digital integrated circuits; CMOS technology; double poly AMS technology development; logic CMOS; optimal polysilicon gate etch process; poly stringer elimination; poly-insulator-poly analog mixed signal device; CMOS logic circuits; CMOS process; CMOS technology; Capacitors; Dielectric thin films; Etching; Fabrication; MIMO; Silicides; Tungsten;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306340
