DocumentCode
3464747
Title
A fuzzy-based black-box approach to IGBT modelling
Author
Monti, A.
Author_Institution
Dipt. di Elettrotecnica, Politecnico di Milano, Italy
Volume
2
fYear
1996
fDate
13-16 Oct 1996
Firstpage
1147
Abstract
A new approach to the modelling of a power component is presented: the key point is the analysis of the possibility of arriving at an accurate representation starting from a small amount of information. The basic idea is to apply a neuro fuzzy methodology. The simulation results obtained for a commercial IGBT are presented and discussed
Keywords
electronic engineering computing; fuzzy neural nets; insulated gate bipolar transistors; power transistors; semiconductor device models; IGBT modelling; fuzzy-based black-box approach; neuro fuzzy methodology; power component; Bipolar transistors; Fuzzy systems; Information analysis; Insulated gate bipolar transistors; MOSFET circuits; Performance analysis; Power system modeling; Snubbers; Transient analysis; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits, and Systems, 1996. ICECS '96., Proceedings of the Third IEEE International Conference on
Conference_Location
Rodos
Print_ISBN
0-7803-3650-X
Type
conf
DOI
10.1109/ICECS.1996.584625
Filename
584625
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