Title :
A fuzzy-based black-box approach to IGBT modelling
Author_Institution :
Dipt. di Elettrotecnica, Politecnico di Milano, Italy
Abstract :
A new approach to the modelling of a power component is presented: the key point is the analysis of the possibility of arriving at an accurate representation starting from a small amount of information. The basic idea is to apply a neuro fuzzy methodology. The simulation results obtained for a commercial IGBT are presented and discussed
Keywords :
electronic engineering computing; fuzzy neural nets; insulated gate bipolar transistors; power transistors; semiconductor device models; IGBT modelling; fuzzy-based black-box approach; neuro fuzzy methodology; power component; Bipolar transistors; Fuzzy systems; Information analysis; Insulated gate bipolar transistors; MOSFET circuits; Performance analysis; Power system modeling; Snubbers; Transient analysis; Voltage control;
Conference_Titel :
Electronics, Circuits, and Systems, 1996. ICECS '96., Proceedings of the Third IEEE International Conference on
Conference_Location :
Rodos
Print_ISBN :
0-7803-3650-X
DOI :
10.1109/ICECS.1996.584625
