Title :
A GaAs micromachined accelerometer with frequency output based on resonant tunneling diodes
Author :
Xie, Bin ; Xue, Chen-Yang ; Zhang, Wen-Dong ; Xiong, Ji-Jun ; Zhang, Bin-Zhen ; Hu, Jie
Author_Institution :
Nat. Key Lab. for Electron. Meas. Technol., North Univ. of China, Taiyuan
Abstract :
The paper reports a novel GaAs micromachined accelerometer with frequency output based on resonant tunneling diodes (RTD). The sensitive unit of the accelerometer is the RTD which is located on GaAs beams. Based on the piezoresistive effect of RTD and the frequency characteristics of RTD oscillator, the accelerometer transducers acceleration into frequency output. This kind of accelerometer has been fabricated by surface processes and GaAs micromachining bulk etch processes
Keywords :
accelerometers; gallium arsenide; micromachining; microsensors; oscillators; resonant tunnelling diodes; GaAs; RTD oscillator; accelerometer transducers acceleration; bulk etch processes; micromachined accelerometer; micromachining; piezoresistive effect; resonant tunneling diodes; Acceleration; Accelerometers; Diodes; Frequency; Gallium arsenide; Micromachining; Oscillators; Piezoresistance; Resonant tunneling devices; Transducers;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306348
