A 1x2 MIMO Multi-Band CMOS Transceiver with an Integrated Front-End in 90nm CMOS for 802.11a/g/n WLAN Applications

Author

Degani, Ofir ; Ruberto, Mark ; Cohen, Emanuel ; Eilat, Yishai ; Jann, Benjamin ; Cossoy, Fabian ; Telzhensky, Nikolay ; Maimon, Tzvi ; Normatov, Gregory ; Banin, Rotem ; Ashkenazi, Ori ; Ben Bassat, A. ; Zaguri, Sharon ; Hara, Gabriel ; Zajac, Mario ; Sha

Author_Institution

Intel, Haifa

fYear

2008

fDate

3-7 Feb. 2008

Firstpage

356

Lastpage

619

Abstract

This paper presents preliminary results of a radio chip design, implemented in a standard 90 nm CMOS process, which provides significant platform cost reduction by fully integrating the LNAs and high efficiency Class-AB PAs (and their matching networks) in a 1x2 scheme for 802.11a/g/n protocols.

Keywords

CMOS integrated circuits; MIMO communication; low noise amplifiers; power amplifiers; protocols; transceivers; wireless LAN; CMOS process; LNA integration; MIMO multiband CMOS transceiver; WLAN applications; cost reduction; high efficiency Class-AB power amplifier; integrated front-end; low-noise amplifiers; protocols; size 90 nm; Antenna measurements; MIMO; OFDM; Power generation; Power measurement; Radio frequency; Temperature measurement; Testing; Transceivers; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical Papers. IEEE International

Conference_Location

San Francisco, CA

Print_ISBN

978-1-4244-2010-0

Type

conf

DOI

10.1109/ISSCC.2008.4523204

Filename

4523204