DocumentCode
3464851
Title
Bipolar bootstrapped multi-emitter BiCMOS (B2M-BiCMOS) logic for low-voltage applications
Author
Wu, Chung-Yu ; Tseng, Yuh-Kuang
Author_Institution
Integrated Circuits & Syst. Lab., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume
2
fYear
1996
fDate
13-16 Oct 1996
Firstpage
1174
Abstract
A new full-swing BiCMOS logic circuits called the bootstrapped multi-emitter BiCMOS (B2M-BiCMOS) logic is proposed and analyzed. HSPICE simulations have been performed to compare speed performance of the new BiCMOS logic circuit with those of CMOS, conventional BiCMOS, and Bootstrapped BiCMOS (BS-BiCMOS) logic circuits, in 1 μm technology. It has been shown that as compared to BS-BiCMOS (CMOS) logic gate, the new B2M-BiCMOS 3-input NAND gate with 2 V supply voltage and 0.5 pF output loading has about 36% (72%) improvement in the propagation delay time whereas the B2M-BiCMOS 5- and 7-input NAND gates have 1.84 (2.4) and 2.16 (3.1) times of improvement, respectively. This advantageous performance makes the B2M-BiCMOS feasible in many low-voltage BiCMOS applications
Keywords
BiCMOS digital integrated circuits; BiCMOS logic circuits; delays; logic design; logic gates; 0.5 pF; 1 micron; 2 V; HSPICE simulations; NAND gate; bipolar bootstrapped multi-emitter BiCMOS logic; full-swing BiCMOS logic circuits; low-voltage applications; propagation delay time; speed performance; Application specific integrated circuits; BiCMOS integrated circuits; Bipolar transistors; CMOS logic circuits; Capacitors; Degradation; Logic circuits; Logic gates; Switching circuits; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits, and Systems, 1996. ICECS '96., Proceedings of the Third IEEE International Conference on
Conference_Location
Rodos
Print_ISBN
0-7803-3650-X
Type
conf
DOI
10.1109/ICECS.1996.584632
Filename
584632
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