Title :
A novel SPDT MEMS switch with isolation between bias and signal
Author :
Huang, Jiwei ; Wang, Zhigong
Author_Institution :
Inst. of RF- & OE-ICs, Southeast Univ., Nanjing
Abstract :
A single-pole double throw (SPDT) radio frequency (RF) switching circuit is designed in a surface-micromachined, metal-metal contacting structure and fabricated in an RF MEMS (micro-electro-mechanical system) process. A folded cantilever beam is proposed to reduce the driving voltage. A dielectric layer is used to provide the isolation between the conductors of the bias and RF signal. Simulation results that in the frequency range from DC to 10 GHz the SPDT switch has an insertion loss of less 1 dB and an isolation of below -40 dB
Keywords :
cantilevers; micromachining; microswitches; microwave switches; 0 to 10 GHz; RF MEMS process; RF signal; SPDT MEMS switch; dielectric layer; folded cantilever beam; metal-metal contacting structure; single-pole double throw radio frequency switching circuit; surface-micromachined structure; Contacts; Dielectrics; Microelectromechanical systems; Microswitches; Radio frequency; Radiofrequency microelectromechanical systems; Structural beams; Switches; Switching circuits; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306379
