A novel SPDT MEMS switch with isolation between bias and signal

Author

Huang, Jiwei ; Wang, Zhigong

Author_Institution

Inst. of RF- & OE-ICs, Southeast Univ., Nanjing

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

575

Lastpage

577

Abstract

A single-pole double throw (SPDT) radio frequency (RF) switching circuit is designed in a surface-micromachined, metal-metal contacting structure and fabricated in an RF MEMS (micro-electro-mechanical system) process. A folded cantilever beam is proposed to reduce the driving voltage. A dielectric layer is used to provide the isolation between the conductors of the bias and RF signal. Simulation results that in the frequency range from DC to 10 GHz the SPDT switch has an insertion loss of less 1 dB and an isolation of below -40 dB

Keywords

cantilevers; micromachining; microswitches; microwave switches; 0 to 10 GHz; RF MEMS process; RF signal; SPDT MEMS switch; dielectric layer; folded cantilever beam; metal-metal contacting structure; single-pole double throw radio frequency switching circuit; surface-micromachined structure; Contacts; Dielectrics; Microelectromechanical systems; Microswitches; Radio frequency; Radiofrequency microelectromechanical systems; Structural beams; Switches; Switching circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306379

Filename

4098171