The role of focused ion beams in physical failure analysis (ICs)

Focused ion beam (FIB) techniques are used to both remove and add metallization on integrated circuits for use in failure analysis. Localized sputtering is used to electrically isolate circuits and open holes to allow direct access to lower-lying levels. FIB induced deposition is used to wire the defective device for specific test conditions. The authors concentrate on the electrical analysis capabilities of this technique. Failure analysis on submicron lines and features on integrated circuits can be carried out with the help of FIB. Circuits and devices can be isolated by clean, localized cuts in metal lines and lands, and connections to other circuits or to the outside world can be made using FIB-induced deposition of a conducting material. FIB techniques are precise, relatively noninvasive, and often the only feasible way to perform many types of electrical analysis.<>