Title :
A novel cantilever acoustic sensor with frequency output based on resonant tunneling diodes
Author :
Wang, Jian ; Zhang, Wen-Dong ; Xue, Chen-Yang ; Xiong, Ji-Jun ; Liu, Jun ; Tong, Zhao-Min
Author_Institution :
National Key Lab. for Electron. Meas. Technol., North Univ. of China, Taiyuan
Abstract :
This paper reports a novel GaAs cantilever acoustic sensor based on AlAs/InxGa1-xAs/GaAs resonant tunneling diode (RTD) with a frequency output. The RTD is incorporated in a 10 mum thick cantilever diaphragm and the fabrication technology of the cantilever diaphragm is based upon the micromachined control holes technology. A relaxation oscillator is obtained with the RTD biased in the negative differential resistance (NDR) region. Pressure applied to the RTD changes the frequency of oscillation due to the shift in current-voltage characteristics. The main feature of this sensor type is the direct frequency output and the sensitivity can be up to 102kHz/kPa
Keywords :
III-V semiconductors; acoustic devices; aluminium compounds; cantilevers; gallium arsenide; indium compounds; relaxation oscillators; resonant tunnelling diodes; sensors; 10 micron; AlAs-InGaAs-GaAs; cantilever acoustic sensor; current-voltage characteristics; micromachined control holes technology; negative differential resistance region; relaxation oscillator; resonant tunneling diodes; thick cantilever diaphragm; Acoustic sensors; Current-voltage characteristics; Diodes; Fabrication; Frequency; Gallium arsenide; Oscillators; Resonant tunneling devices; Sensor phenomena and characterization; Thickness control;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306387
